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| SI3433 New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = - 4.5 V - 20 0.057 @ VGS = - 2.5 V 0.080 @ VGS = - 1.8 V ID (A) - 5.6 - 4.8 - 4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS - 1.7 2.0 1.0 - 55 to 150 - 4.1 - 20 - 0.9 1.1 0.6 W _C - 3.1 A Symbol VDS VGS 5 secs Steady State - 20 "8 Unit V - 5.6 - 4.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71160 S-00624--Rev. A, 03-Apr-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W C/W 2-1 SI3433 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.6 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 4.8 A VGS = - 1.8 V, ID = - 1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 5.6 A IS = - 1.7 A, VGS = 0 V - 20 0.025 0.048 0.066 16 - 0.7 - 1.2 0.042 0.057 0.080 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 5.6 A 11.5 3 1.7 18 25 80 45 30 36 50 160 90 50 ns 17 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 20 Transfer Characteristics TC = - 55_C 16 I D - Drain Current (A) I D - Drain Current (A) 16 25_C 12 2V 12 125_C 8 8 4 1.5 V 1V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71160 S-00624--Rev. A, 03-Apr-00 www.vishay.com 2-2 SI3433 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 VGS = 1.8 V r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.12 2000 Ciss 1500 2500 Vishay Siliconix Capacitance 0.09 0.06 VGS = 2.5 V VGS = 4.5 V 1000 0.03 500 Coss Crss 0 4 8 12 16 20 0.00 0 4 8 12 16 20 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.6 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.6 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.12 0.15 On-Resistance vs. Gate-to-Source Voltage 0.09 ID = 5.6 A 0.06 0.03 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71160 S-00624--Rev. A, 03-Apr-00 www.vishay.com 2-3 SI3433 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 24 18 TA = 25_C 12 0.1 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71160 S-00624--Rev. A, 03-Apr-00 |
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